Ivan Divliansky (editor) - Advances in High-Power Fiber and Diode Laser Engineering
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Advances in High-Power Fiber and Diode Laser Engineering: summary, description and annotation
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Advances in High-Power Fiber and Diode Laser Engineering provides an overview of recent research trends in fiber and diode lasers and laser systems engineering. In recent years, many new fiber designs and fiber laser system strategies have emerged, targeting the mitigation of different problems which occur when standard optical fibers are used for making high-power lasers. Simultaneously, a lot of attention has been put to increasing the brightness and the output power of laser diodes. Both of these major laser development directions continue to advance at a rapid pace with the sole purpose of achieving higher power while having excellent beam quality.
The book begins by introducing the principles of diode lasers and methods for improving their brightness. Later chapters cover quantum cascade lasers, diode pumped high power lasers, high average power LMA fiber amplifiers, high-power fiber lasers, beam combinable kilowatt all-fiber amplifiers, and applications of 2 m thulium fiber lasers and high-power GHz linewidth diode lasers.
Written by a team of authors with experience in academia and industrial research and development, and brought together by an expert editor, this book will be of use to anyone interested in laser systems development at the laboratory or commercial scale.
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Diode laser: fundamentals and improving the brightness
Manoj Kanskar
1nLIGHT, Inc., Vancouver, WA, USA
Diode lasers started out with a humble beginning. They were perceived as impractical devices suitable only for scientific curiosity at cryogenic temperatures. Over the past half a century, remarkable improvements in diode laser performance took place throughout the world. Realization of quantum-well gain medium was an early seminal achievement. This ushered in an era where it became possible to operate laser diodes at room temperature, but they were used in limited niche applications due to exorbitantly high cost. Confluence of numerous technological advancements such as defect-free crystal growth, as well as device fabrication, facet passivation, and stress-free die-bonding led to unprecedented device reliability. Long lifetime is one of the trademarks of semiconductor lasers. These devices became ubiquitous in data storage for mass media applications and 980 nm single mode pump diode lasers became the workhorse in telecom industry. As a result, volume production of diode lasers took place. Once it became clear to the Defense community that further improving the electrical-to-optical power conversion efficiency (PCE) of diode lasers was the key to realizing compact high energy lasers (HEL), race for achieving super high efficiency began and record high efficiency of ~73 percent was realized. This was a second seminal technological advancement in diode lasers leading to unprecedented power-scaling which drove down the cost of laser diodes. As the diode laser output power improved, fiber laser power increased commensurately; very low dollars-per-watt, both direct diode and fiber lasers became affordable. This led to displacement of legacy CO2 and flash-lamp pumped solid-state lasers and flood gates opened for new applications. Diode lasers and fiber lasers enable low-cost manufacturing of hand-held mobile devices, HD TV screens, virtual reality glasses, highly reliable and light-weight and efficient cars, ships and airplanes, 3D-printed metal parts, HEL for Defense, and many types of lasers for scientific and industrial applications. There is much room for improvement in diode laser brightness which will certainly lower the cost thus enabling further new applications. This chapter is dedicated to briefly looking back at the evolution of rise of a disruptive technology and surveying the current challenges and roadblocks to improving brightness as well as understanding the current state-of-the-art of diode lasers followed by a summary of outlook of its brightness improvement.
The initial observations of the conversion of charge carriers into photons through a semiconductor device date back over 100 years. Henry J. Round working for the Marconi Company in New York in 1907 experimented with cats whisker detectors using carborundum when he applied a forward bias that caused electrons and holes to recombine at the junction to produce a glow. A systematic investigation of semiconductor materials was launched in the early 1930s at the Physico-Technical Institute (FTI) under the direction of A.F. Ioffe [] reported in 1952. This observation of limited emission and unknown applications attracted limited attention until the 1950s when Rubin Braunstein observed infrared emission from gallium arsenide (GaAs) semiconductor device at RCA laboratories in Princeton, New Jersey.
This early work did not attract much attention until 1962 when Robert Keyes presented results from work at MIT Lincoln Laboratory on diodes developed by diffusing zinc impurities into GaAs. This chapter showed the promise for higher power and higher efficiency light emitting diodes. Robert Hall from General Electric Research labs in Schenectady, NY saw this presentation and began developing concepts to create a laser cavity by polishing the edges of his GaAs device. Two years earlier the first ruby laser had been demonstrated using a five-meter square amplification apparatus and a significant amount of energy input. By comparison, Hall began developing a concept for a heavily doped diode with a resonant cavity along the junction plane that eventually fit on a chip smaller than a finger nail and efficient enough to run with a small battery. On the morning of Sunday, 16 September 1962, Hall demonstrated a bright horizontal line of infrared emission that clearly wasnt spontaneous emissionthe first semiconductor laser was born []. Later Nick Holonyak also at General Electric developed the first visible wavelength laser by increasing the bandgap with gallium arsenide-phosphide.
These early demonstrations of a semiconductor laser involved simple pn homojunction devices. These devices had very poor carrier and optical confinement. The concepts for low-threshold double-heterostructure lasers were suggested by Herbert Kroemer [] of the A.F. Ioffe Physico-Technical Institute in St. Petersberg in 1963. This development led to the first continuous-wave room-temperature diode lasers and for this work the two shared the Nobel Prize in 2000.
Initial crystals for semiconductor lasers were produced using liquid phase epitaxy (LPE). These devices suffered tremendously from carrier leakage. These early double-heterostructures did not provide sufficient carrier confinement. To mitigate carrier leakage, double heterostructure laser diodes had to be operated at cryogenic temperature. Furthermore, threshold current densities were many orders of magnitude higher by todays standards. These factors resulted in rapid device degradation. They were not practical for commercial products. It took several more years to refine double-heterostructure lasers to overcome cryogenic operation. Both a Bell Laboratory research team and researchers at the Ioffe Institute demonstrated the first room temperature double-heterostructure laser in 1970 []. Although this technology still was not ready for commercial use, it was a critical turning point in the development of semiconductor lasers. This proof-of-concept stimulated vigorous competition among companies to develop high power diodes operating at room temperature. The era of high-temperature operating diodes began. US electronic, telecommunication and computing enterprises such as GE, RCA, Bell Laboratory and IBM as well as Japanese firms such as Hitachi, Toshiba, Mitsubishi Electric, Nippon Electric Company (NEC), Fujitsu, and Nippon Telegraph and Telephone (NTT) participated in the race for high power and room temperature operating laser diodes. Many of these companies ultimately developed lasers either for communications or data-storage. The media hailed this invention as one that would fundamentally transform Optical Engineering akin to the transistor changing the face of Electronics Engineering. But this harbinger of good news had to wait for another critical technology developmentthe invention of quantum-well gain medium.
At about this same time, in 1966, another revolution was brewing. Charles K. Kao working at Standard Telecommunication Laboratories in Harlow, UK, makes a discovery that leads to a breakthrough in fiber optics. His calculations demonstrated that light could travel over 100 km distance in a glass fiber for which he received the 2009 Novel Prize in physics. Neither of these inventions could have foreseen an eventual conjugation of these two technologies giving rise to high-power fiber lasers after decades of continuous improvements. This union had to wait for the advent of high brightness laser diodes and rare-earth doped fibers to mature beyond what was sufficient for telecom and data storage applications.
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