Khalaf Khaled - Data Transmission at Millimeter Waves Exploiting the 60 GHz Band on Silicon

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Springer-Verlag Berlin Heidelberg 2015

Khaled Khalaf , Vojkan Vidojkovic , Piet Wambacq and John R. Long Data Transmission at Millimeter Waves Lecture Notes in Electrical Engineering 10.1007/978-3-662-46938-5_1

1. Introduction

Khaled Khalaf 1

(1)

SSET-CSI, IMEC, Leuven, Belgium

(2)

SSET-CSI, IMEC, Leuven, Belgium

(3)

SSET-CSI, IMEC, Leuven, Belgium

(4)

Faculty of EEMCS, Delft University of Technology, 2628 CD Delft, The Netherlands

Khaled Khalaf (Corresponding author)

Email:

Vojkan Vidojkovic

Email:

Piet Wambacq

Email:

John R. Long

Email:

Email:

The unlicensed band centered at 60 GHz lies in the extremely high frequency (EHF) band, which is the highest radio frequency band].

1.1 Motivation

The increasing demands of society for technology driven appliances is pushing the trend to shift operation to higher frequencies, and advancements in silicon technology is making this shift feasible. Data transmission is the current example of our choice. Almost no person can imagine carrying a laptop or any other portable device which is not connected to the internet, or even to a local network, from which youre transmitting and receiving information. These can be ranging from simple text information to streaming video data that requires large data rates of few gigabits per second. A movie, for example, can be steamed with more quality if uncompressed data is used. This needs larger amount of data, which can be transferred at the same speed, or even faster, using higher data rates. Higher data rates require more bandwidth, which is available at higher frequencies. Thus, operation at mm-wave frequencies is a good choice, as compared to lower frequency bands (e.g., WiFi MIMO at 2.4 or 5 GHz), to meet the current higher data rate demands of applications.

An unlicensed band of 7 GHz around 60 GHz from 57 to 64 GHz was assigned by the Federal Communication Commission (FCC) in the United States [ illustrates the oxygen absorption peak in the 60 GHz region.

Fig. 1.1

Atmospheric propagation attenuation versus frequency []

1.2 60 GHz Area Background

More information about the 60 GHz area from the system point of view is important to have a good background before starting circuit design. Circuit specifications were given as an input, and no system specs were derived from the standard. Thus, only some background information is going to be discussed in this section.

1.2.1 Standards and Frequency Plan

60 GHz frequency planning is covered in detail in both IEEE 802.15.3c [. Adjacent channels can be bonded together to allow more bandwidth. Several possibilities for bonding multiple, adjacent channels exist for increased data rate.

Table 1.1

Channels defined by the IEEE and ECMA standards

Channel ID	Lower frequency GHz	Center frequency GHz	Upper frequency GHz
	57.240	58.320	59.400
	59.400	60.480	61.560
	61.560	62.640	63.720
	63.720	64.800	65.880

Fig. 1.2

5766 GHz band divided into 4 channels []

1.2.2 Beamforming and System Architecture

Oxygen absorption at 60 GHz causes signal attenuation due to propagation loss. One advantage of the implicit attenuation for operation at 60 GHz is that signals cannot propagate more than 10 m and cannot penetrate walls. This increases security between two close offices for example. Directional propagation is used to enhance signal transmission and reception. In the transmitter, radiated power is concentrated towards the receiver instead of being wasted in unwanted directions. Similarly, gain is boosted in one direction and unwanted interferers can be spatially attenuated in the receiver. This suggests using multiple antennas at the transmitter, to direct and enhance signal transmission, and at the receiver, to improve the sensitivity and reduce interference. The size of an antenna is inversely proportional to the operating frequency. For example, 60 GHz operation allows the use of 16-element antenna array that occupies the same area as a dipole antenna at 5 GHz [].

Beamforming is a signal processing technique used in sensor arrays for directional signal transmission or reception [].

Fig. 1.3

Radiation pattern of a beamformer []

Fig. 1.4

Beamforming system with antenna arrays and transceivers

Phase shifting in a receiver can be implemented in four different ways: at RF after the LNA, at baseband after the mixer, in the LO path or using signal processing in the digital domain []) places lossy elements directly after the LNA which degrades the system gain, noise figure and bandwidth. System gain and noise figure are less sensitive to amplitude variations in the large LO signal. Thus, phase shifting at LO provides the lowest effect on signal quality. Phase shifting after the mixer causes insignificant deterioration of gain and noise figure (as compared to phase shifting at RF). Signal combination is performed at baseband in both LO and baseband phase shifting. In both cases, in order to avoid using multiple PLLs, LO signal should be distributed to different antenna paths. This includes other problems, such as cross-talk and low LO power levels.

One antenna path of the receiver is shown in the block diagram of Fig.. Phase shifting and signal-combination are performed at baseband. The receiver is a direct conversion receiver, which includes a QVCO, LNA and mixer in the font-end. Antenna and baseband circuit design details are outside the scope of this book.

Fig. 1.5

60 GHz receiver architecture

1.2.3 Enabling Technology

In a mixed-signal chip that includes analog and digital circuits, CMOS technology is preferred over bipolar for high volume applications when the digital part dominates. Moores law states that on-chip density of transistors doubles every two years. This doubling is due to the fabrication of transistors with smaller minimum length. Smaller size transistors enable operation at higher frequencies. Thats the reason for which operation at mm-wave became possible nowadays after it was just a dream years ago.

Scaling also has drawbacks. Smaller transistors usually require lower supply voltage due to the lower gate oxide. For example, the breakdown voltage is 1.8 V for 0.18 m devices and 1.2 V for 0.13 m ones [].

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