Yang Xu - Graphene for Post-Moore Silicon Optoelectronics

1. Chapter 1
2. Chapter 7

1. Chapter 1
2. Chapter 2
3. Chapter 3
4. Chapter 4
5. Chapter 5
6. Chapter 6
7. Chapter 7
8. Chapter 8
9. Chapter 9
10. Chapter 10

Yang Xu, Khurram Shehzad, Srikrishna Chanakya Bodepudi, Ali Imran, and Bin Yu

Authors

Prof. Yang Xu

Zhejiang University

School of MicroNano Electronics

No. 388, YuHangTang Rd.

Xihu District

310027 Hangzhou

China

Dr. Khurram Shehzad

Zhejiang University

School of MicroNano Electronics

No. 388, YuHangTang Rd.

Xihu District

310027 Hangzhou

China

Dr. Srikrishna Chanakya Bodepudi

Zhejiang University

School of MicroNano Electronics

No. 388, YuHangTang Rd.

Xihu District

310027 Hangzhou

China

Dr. Ali Imran

Zhejiang University

School of MicroNano Electronics

No. 388, YuHangTang Rd.

Xihu District

310027 Hangzhou

China

Prof. Bin Yu

Zhejiang University

School of MicroNano Electronics

No. 388, YuHangTang Rd.

Xihu District

310027 Hangzhou

China

Cover Images: GrAl/Shutterstock

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Miniaturization of electronic devices a primary step that drives Moore's law allows the number of digital electronic devices to roughly double by every two years within a fixed cost and area while improving their performance and functionality. However, such progress in powerefficient, highperformance, small device footprint, and lowcost devices has come to a halt as further scaling down leads to difficulty in achieving complex doping profiles and excessive leakage currents. This issue is elevated when devices are scaled down below 3nm, where bulk semiconductors lose their structural quality and show degrading charge transport and optoelectronic properties. In this context, projecting device performance beyond the scaling limits of Moore's law requires technologies based on novel materials, circuits, and device architecture. Graphene and twodimensional ( 2D ) materials have emerged as alternate candidates with atomically thin structures showing excellent charge transport properties and prototypes in computational and noncomputational applications.

Although the domination of Si technology is unlikely to be abandoned in the foreseeable future, the growing benefits of graphenebased electronics call for hybrid device architectures that incorporate existing remarkable technological evolution and commercial success of Si CMOS technology while adopting the novel features of graphene. More than Moore or noncomputational systems, such as photodetectors and modulators for image sensors, light detection and ranging ( LiDAR ), lasers, biomedical sensors, and neuromorphic and radiofrequency devices, are swiftly advancing beyond Si electronics when integrated with graphene and other 2D materials by adapting their benefits of lowpower consumption and intrinsic scalability. Fully integrated prototypes of 2D/Si chips, especially graphene, have been realized for diverse applications, including image sensor arrays and optical receivers. Most of these prototypes are developed on the integrated silicon chips where silicon devices provide driver, source, and readout circuitry. This book discusses the basics, applications, challenges, and opportunities regarding integrating graphene with Si technologies, with a special emphasis on grapheneSi (Gr/Si) optoelectronic devices in the postMoore era.

It might be helpful to summarize the important aspects of Gr/Siintegrated devices in optoelectronics in the postMoore era. Our book also discusses the progress and future challenges from synthesis to device fabrication and related physics of highquality, waferscale Gr/Siintegrated optoelectronic devices. All these aspects of the Gr/Si devices are relevant to a broad research community in chemistry, materials science, and electronic engineering. This book is arranged to discuss the opportunities and challenges of Gr/Si systems, where each chapter emphasizes selected topics such as highperformance photodetectors, energyharvesting devices, and image sensors and their corresponding progress and challenges. Special emphasis is given to emerging applications like optoelectronic synaptic devices, optical modulators, and infrared image sensors. This book will serve as a good reference for graduate students, postdocs, and scientists from academia and industry.

15 July 2022

Prof. Yang Xu,

On behalf of all the authors,

Zhejiang University, Hangzhou, China

We would like to thank Ms. Shaoyu Qian and their publishing team from Wiley for their great support. We also would like to sincerely thank the significant and outstanding contributions from our team members including Dr. Lixiang Liu, Dr. Dajian Liu, Dr. Zhixiang Zhang, Dr. P. Pham, Dr. Jianhang Lv, Dr. Dong Pu, Dr. K. Dianey, M. Ali, Xiaocheng Wang, Xiaoxue Cao, A. Anwar, M. Malik, and Xinyu Liu. Without their great support and remarkable dedication, we could not have finished this book. This book is supported by National Natural Science Foundation of China (NSFC) (Grant Nos. 92164106, 61874094, and 62090034).

Prof. Yang Xu is a Fellow of the Institute of Physics (FInstP, IOP Fellow), IEEE NTC Distinguished Lecturer, and IEEE Senior Member of the Electron Devices Society. He received his B.S. degree from Department of EE, Institute of Microelectronics, Tsinghua University, M.S. and Ph.D. degrees in ECE from the University of Illinois UrbanaChampaign (UIUC), USA. He is now a full professor at the School of MicroNano Electronics, Zhejiang University, China. He was also a visiting byFellow of Churchill College at the University of Cambridge, UK, and a visiting professor at the University of California, Los Angeles (UCLA). He has published more than 120 papers in