Andrei Grebennikov - RF and Microwave Power Amplifier Design

Andrei Grebennikov received his Dipl. Eng. degree in radio electronics from the Moscow Institute of Physics and Technology, Moscow, Russia, in 1980, and his Ph.D. in radio engineering from the Moscow Technical University of Communications and Informatics, Moscow, Russia, in 1991. He obtained long-term academic and industrial experience working with the Moscow Technical University of Communications and Informatics, also in Moscow, the Institute of Microelectronics (Singapore), M/A-COM (Cork, Ireland), Infineon Technologies (Munich, Germany, and Linz, Austria), and Bell Labs, Alcatel-Lucent (Dublin, Ireland) as an Engineer, Researcher, Lecturer, and Educator. He has lectured as a Guest Professor with the University of Linz, Linz, Austria, and presented short courses and tutorials as an Invited Speaker at the IEEE International Microwave Symposia, European and Asia-Pacific Microwave Conferences, the Institute of Microelectronics (Singapore), the Motorola Design Centre (Penang, Malaysia), the Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia), and the Aachen Technical University (Aachen, Germany). He is an author and co-author of more than 100 papers, holds 30 European and U.S. patents and patent applications, and has authored six books dedicated to RF and microwave circuit design.

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T he main objective of this book is to present all relevant information required for RF and microwave power amplifier design, including well-known historical and recent novel schematic configuration, theoretical approaches, circuit simulation results, and practical implementation techniques. This comprehensive book can be very useful for lecturing to promote the systematic way of thinking with analytical calculations, circuit simulation, and practical verification, thus making a bridge between theory and practice of RF and microwave engineering. As it often happens, a new result is the well-forgotten old one. Therefore, the demonstration of not only new results based on new technologies or circuit schematics is given, but some sufficiently old ideas or approaches are also introduced that could be very useful in modern design practice or could contribute to appearance of new general architectural ideas and specific circuit design techniques. As a result, this book is intended for and can be recommended to university-level professorsas a comprehensive reference material to help in lecturing for graduates and postgraduates students, to researchers and scientists to combine the theoretical analysis with practical design and to provide a sufficient basis for innovative ideas and circuit design techniques, and to practicing designers and engineers as the book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles and applications.

In , the two-port networks are introduced to describe the behavior of linear and nonlinear circuits. To characterize the nonlinear properties of the bipolar or field-effect transistors, their equivalent circuit elements are expressed through the impedance Z-parameters, admittance Y-parameters, or hybrid H-parameters. On the other hand, the transmission ABCD