Steven H Voldman - The Esd Handbook

1. Chapter 2
2. Chapter 6
3. Chapter 7
4. Chapter 10
5. Chapter 17
6. Chapter 19
7. Chapter 20
8. Chapter 21
9. Chapter 22

1. Chapter 1
2. Chapter 2
3. Chapter 4
4. Chapter 5
5. Chapter 6
6. Chapter 7
7. Chapter 8
8. Chapter 9
9. Chapter 10
10. Chapter 11
11. Chapter 12
12. Chapter 13
13. Chapter 14
14. Chapter 15
15. Chapter 16
16. Chapter 17
17. Chapter 18
18. Chapter 19
19. Chapter 20
20. Chapter 21
21. Chapter 22
22. Chapter 23
23. Chapter 24
24. Chapter 25
25. Chapter 26

Steven H. Voldman

This edition first published 2021
2021 John Wiley & Sons Ltd.

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Library of Congress Cataloging-in-Publication Data

Names: Voldman, Steven H., author.

Title: The ESD handbook / Steven H. Voldman.

Description: First edition. | Hoboken, NJ : Wiley, [2021] | Includes

bibliographical references and index.

Identifiers: LCCN 2020025380 (print) | LCCN 2020025381 (ebook) | ISBN

9781119965176 (hardback) | ISBN 9781119233107 (adobe pdf) | ISBN

9781119233138 (epub)

Subjects: LCSH: Electric discharges. | SemiconductorsProtection. |

Breakdown (Electricity)

Classification: LCC QC585.7.E43 V65 2021 (print) | LCC QC585.7.E43

(ebook) | DDC 537.5/2dc23

LC record available at https://lccn.loc.gov/2020025380

LC ebook record available at https://lccn.loc.gov/2020025381

Cover Design: Wiley

Cover Image: Lehrer/Shutterstock

To My Wife

Betsy H. Brown

Dr. Steven H. Voldman is the first IEEE Fellow in the field of electrostatic discharge ( ESD ) for Contributions in ESD protection in CMOS, Silicon On Insulator and Silicon Germanium Technology. He received his BS in Engineering Science from the University of Buffalo (1979); a first MS in EE (1981) from the Massachusetts Institute of Technology ( MIT ); a second degree, EE Degree (Engineer Degree) from MIT; a MS in Engineering Physics (1986) and a PhD in electrical engineering (EE) (1991) from the University of Vermont under IBMs Resident Study Fellow program. In 2018, Dr. Voldman served as a visiting faculty member of Khon Kaen University ( KKU ), Thailand as an International Visiting Scholar position.

Dr. Voldman was a member of the semiconductor development of IBM for 25 years. He was a member of the IBMs Bipolar SRAM, CMOS DRAM, CMOS logic, Silicon on Insulator ( SOI ), 3-D memory team, BiCMOS and Silicon Germanium, RF CMOS, RF SOI, smart power technology development and image processing technology teams. In 2007, Voldman joined the Qimonda Corporation as a member of the DRAM development team, working on 70, 58, 48, and 32 nm CMOS DRAM technology. In 2008, Voldman worked as a full-time ESD consultant for the Taiwan Semiconductor Manufacturing Corporation ( TSMC ) supporting ESD and latchup development for 45 nm CMOS technology and was a member of the TSMC Standard Cell Development team in Hsinchu, Taiwan. From 2009 to 2011, Steve was a Senior Principal Engineer working for the Intersil Corporation, working on analog, power, and RF applications in RF CMOS, RF Silicon Germanium, and SOI. From 2013 to 2014, Dr. Voldman was a consultant for the Samsung Electronics Corporation in Dongtan, South Korea. In 2018, Dr. Voldman served as an International Visiting Scholar of Khon Kaen University (KKU), Thailand.

Dr. Voldman was chair of the SEMATECH ESD Working Group, from 1995 to 2000. In his SEMATECH Working Group, the effort focused on ESD technology benchmarking, the first transmission line pulse ( TLP ) standard development team, strategic planning, and JEDEC-ESD Association standards harmonization of the human body model ( HBM ) standard. From 2000 to 2013, as Chairman of the ESD Association Work Group on TLP and very-fast TLP ( VF-TLP ), his team was responsible for initiating the first standard practice and standards for TLP and VF-TLP. Steve Voldman has been a member of the ESD Association Board of Directors, and Education Committee. He initiated the ESD on Campus program, which was established to bring ESD lectures and interaction to university faculty and students internationally; the ESD on Campus program has reached over 40 universities in the United States, Korea, Singapore, Taiwan, Malaysia, Philippines, Thailand, India, China, Senegal, Swaziland, and Benin. Dr. Voldman initiated the first ESD Association ( ESDA ) Student Chapter in Chengdu, China in 2014. In the last few years, he has been providing ESD lectures to Universiti Cheik Anta Diop in Dakar, Senegal, Limkokwing University of Creative Technology in Swaziland, and Universiti Abomey-Calavi in Cotonou, Benin, and University of Zimbabwe.

He is a recipient of 264 issued US patents and has written over 150 technical papers in the area of ESD and CMOS latchup. Since 2007, he has served as an expert witness in patent litigation; and has also founded a limited liability corporation (LLC) consulting on business supporting patents, patent writing and patent litigation. Dr. Voldman teaches short courses and tutorials on ESD, latchup, patenting, and invention. In his LLC, S. Voldman served as an expert witness for cases on DRAM development, semiconductor development, integrated circuits, and electrostatic discharge. He is currently writing patents for law firms. Steven Voldman provides tutorials and lectures on inventions, innovations, and patents in Malaysia, Sri Lanka and the United States. In 2018, Dr. Voldman released a book titled,