Yasuo Cho - Scanning Nonlinear Dielectric Microscopy

1. Tables in Chapter 5
2. Tables in Chapter 7
3. Tables in Chapter 11

1. Figures in Chapter 1
2. Figures in Chapter 2
3. Figures in Chapter 3
4. Figures in Chapter 4
5. Figures in Chapter 5
6. Figures in Chapter 6
7. Figures in Chapter 7
8. Figures in Chapter 8
9. Figures in Chapter 9
10. Figures in Chapter 10
11. Figures in Chapter 11
12. Figures in Chapter 12

Yasuo Cho

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Yasuo Cho, Research Institute of Electrical Communication, Tohoku University

Scanning nonlinear dielectric microscopy (SNDM) was invented in 1994 in Yamaguchi, Japan. Originally it was developed for investigating ferroelectric and dielectric materials with rather small nonlinear dielectric effects through the detection of capacitance variations caused by an applied voltage, that is, dC/dV. Thus since its early days, SNDM has featured a high sensitivity to capacitance variation, on the order of 1022F/Hz .

SNDM can easily measure nanoscale ferroelectric domains under ambient conditions and even atomic-scale dipole moments under ultrahigh vacuum conditions. Moreover, as an application of SNDM to next-generation ultrahigh-density memory devices beyond the magnetic hard disk drive (HDD) and semiconductor flash memory, an investigation of ultrahigh-density ferroelectric data storage based on SNDM has been extensively investigated.

As SNDM has a high sensitivity to capacitance variation, it is also very effective at characterizing semiconductor materials and devices. It can easily distinguish the dopant type (PN) and has a wide dynamic range of sensitivity to both low and high concentrations of dopants. It is also applicable to the analysis of compound semiconductors with much lower signal levels than Si. We can avoid errors due to the two-valued function (contrast reversal) problem of dC/dV signals using dC/dz-SNDM. Extended versions of SNDM have been developed, such as superhigher-order SNDM, local-deep-level transient spectroscopy, noncontact SNDM, and scanning nonlinear dielectric potentiometry. The favorable features of SNDM originate from its significant sensitivity.

Thus this book will meet the needs of those researchers in the industry, as well as academics and students, involved in the fields of ferroelectrics, dielectrics, semiconductors, and scanning probe microscopy.

This book will help those intending to investigate the ferroelectric nanodomain structure, which cannot be resolved by conventional piezoresponse force microscopy (PFM), and the atomic dipole moment, which cannot be distinguished by conventional Kelvin probe force microscopy (KPFM), to realize ultrahigh-density ferroelectric data storage with much higher memory densities compared to flash memories and magnetic HDDs, to visualize the dopant distribution in the fine structure of state-of-the-art mutualized semiconductor devices, to visualize linear permittivities with higher resolution than other capacitance microscopies, to perform operand measurements of the carrier distribution of working semiconductor devices, to visualize the depletion layer distribution of semiconductor devices that cannot be measured by other methods, to visualize the two-dimensional trap (interface state of density, Dit) distribution at the MOS interface, which has never been visualized by other techniques, and to measure real-time (ns range) carrier movement in semiconductor materials and devices.

This book about SNDM gives new insight into the material and device physics of ferroelectrics, dielectrics, and semiconductors, which has proven hard to obtain by other methods.

The author would like to acknowledge the many colleagues and students who have collaborated with and assisted the author in developing many advanced types of SNDM.

Finally, the author wishes to thank his family for their kind encouragement. Without their support and understanding, this book would not be have been published.

September 2019