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Henry Radamson - CMOS Past, Present and Future

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CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends.

The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The books key approach is on characterizations, device processing and electrical measurements.

  • Addresses challenges and opportunities for the use of CMOS
  • Covers the latest methods of strain engineering, materials integration to increase mobility, nano-scaled transistor processing, and integration of CMOS with photonic components
  • Provides a look at the evolution of CMOS technology, including the origins of the technology, current status and future possibilities

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CMOS Past Present and Future First Edition Henry H Radamson Jun Luo Eddy - photo 1
CMOS Past, Present and Future

First Edition

Henry H. Radamson

Jun Luo

Eddy Simoen

Chao Zhao

Copyright Woodhead Publishing is an imprint of Elsevier The Officers Mess - photo 2

Copyright

Woodhead Publishing is an imprint of Elsevier

The Officers Mess Business Centre, Royston Road, Duxford, CB22 4QH, United Kingdom

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Copyright 2018 Elsevier Ltd. All rights reserved.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying, recording, or any information storage and retrieval system, without permission in writing from the publisher. Details on how to seek permission, further information about the Publisher's permissions policies and our arrangements with organizations such as the Copyright Clearance Center and the Copyright Licensing Agency, can be found at our website: www.elsevier.com/permissions.

This book and the individual contributions contained in it are protected under copyright by the Publisher (other than as may be noted herein).

Notices

Knowledge and best practice in this field are constantly changing. As new research and experience broaden our understanding, changes in research methods, professional practices, or medical treatment may become necessary.

Practitioners and researchers must always rely on their own experience and knowledge in evaluating and using any information, methods, compounds, or experiments described herein. In using such information or methods they should be mindful of their own safety and the safety of others, including parties for whom they have a professional responsibility.

To the fullest extent of the law, neither the Publisher nor the authors, contributors, or editors, assume any liability for any injury and/or damage to persons or property as a matter of products liability, negligence or otherwise, or from any use or operation of any methods, products, instructions, or ideas contained in the material herein.

Library of Congress Cataloging-in-Publication Data

A catalog record for this book is available from the Library of Congress

British Library Cataloguing-in-Publication Data

A catalogue record for this book is available from the British Library

ISBN: 978-0-08-102139-2 (print)

ISBN: 978-0-08-102140-8 (online)

For information on all Woodhead publications visit our website at https://www.elsevier.com/books-and-journals

Publisher Matthew Deans Acquisition Editor Kayla Dos Santos Editorial - photo 3

Publisher: Matthew Deans

Acquisition Editor: Kayla Dos Santos

Editorial Project Manager: Gabriela D. Capille

Production Project Manager: Joy Christel Neumarin Honest Thangiah

Cover Designer: Christian J. Bilbow

Typeset by SPi Global, India

Contributors

H.H. Radamson

Institute of Microelectronics of Chinese Academy of Sciences (IMECAS)

University of Chinese Academy of Sciences (UCAS), Beijing, PR China

K.P. Jia

Institute of Microelectronics of Chinese Academy of Sciences (IMECAS)

University of Chinese Academy of Sciences (UCAS), Beijing, PR China

Y. Li Imec, Leuven, Belgium

J. Luo

Institute of Microelectronics of Chinese Academy of Sciences (IMECAS)

University of Chinese Academy of Sciences (UCAS), Beijing, PR China

E. Simeon Imec, Leuven, Belgium

G. Wang

Institute of Microelectronics of Chinese Academy of Sciences (IMECAS)

University of Chinese Academy of Sciences (UCAS), Beijing, PR China

X. Wang

Institute of Microelectronics of Chinese Academy of Sciences (IMECAS)

University of Chinese Academy of Sciences (UCAS), Beijing, PR China

W. Wang

Institute of Microelectronics of Chinese Academy of Sciences (IMECAS)

University of Chinese Academy of Sciences (UCAS), Beijing, PR China

C. Zhao

Institute of Microelectronics of Chinese Academy of Sciences (IMECAS)

University of Chinese Academy of Sciences (UCAS), Beijing, PR China

Preface

We are in some way or other affected by the enormous impact of integrated electronics and integrated circuits (ICs). They have changed virtually all aspects of our social and professional lives. CMOS is the main unit in ICs and its design and structure have undergone an evolution for many decades to follow the historical Moore's Law.

This book is written in a notably understandable language for readers and provides a good insight from the basics of CMOS to its development toward the advanced transistor structures.

The book is dedicated to the students and researchers in the field of electrical engineering, who desire to learn more about the CMOS technology.

Acknowledgments

Professor Anders Halln from KTH is acknowledged for his scientific discussions. Many contributors from the Chinese Academy of Sciences have been involved with this book. Our special gratitude to Dr. Huilong Zhu, Dr. Huaxiang Yin, and Dr. Jiang Yan for their remarkable contributions and discussions to the all-last high-k/metal gate integration part. We express our appreciation to Miss Dan Zhang, Mr. Ningyuan Duan, Miss Shujuan Mao, Mr. Jinbiao Liu, and Miss Xuewei Zhao for their valuable help.

Basics of metaloxidesemiconductor field-effect transistor (MOSFET)

H.H. Radamson Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, PR China
University of Chinese Academy of Sciences (UCAS), Beijing, PR China

Abstract

This chapter provides an overview of the basics of MOSFETs for logic and analog applications. It begins with a historical survey of MOSFETs from the time when all started then a focus spends on the MOS structures and its operation modes. Through these discussions, different applied voltages, band diagrams and figures of merit of transistors have been explained. Later, transition from classical planar transistors to three-dimensional FinFET is described. The origin of short channel effects and how to modify the transistor architecture to exercise control over the carrier transport in the channel region are also presented.

Keywords

MOSFET; FinFET; Transistor physics; Short channel effect

1.1 Introduction

MOSFETs are the brick units of integrated circuits (ICs) which are used in many devices in our daily life. They are being used for analog and digital applications. The latter application is for a logic device where the transistor acts as a switch and the performance is qualified with switching speed and switching energy. Since the MOSFET structure has been downscaled in size according to Moore's law, the density and switching speed of transistors have enhanced exponentially where the switching energy has reduced in a similar manner. This evolution of MOSFET structures finally resulted that the planar design was abandoned to three-dimensional (3D) one providing a remarkably better control on the parasitic resistances and capacitances.

The idea of operational field effect transistors (FETs) extends to a US patent submitted by Julius Edgar in 1925; meanwhile, the discovery of MOSFETs by Dawon Kahng and Martin Atalla at Bell labs emerged late in the 1950s. In the beginning, the gate material in the transistors was usually metals, for example, Al, which led to a Metal Oxide Semiconductor abbreviation for such devices. However, later, heavily doped poly-Si was used as the standard gate material due to its high thermal stability without reacting with gate oxide. Nowadays, the new research introduces the metal gate material to be reused when SiO2 gate oxide was substituted with more advanced high-k dielectrics.

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